Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 200A (Tj)
• Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V
• Rds On (Max) @ Id, Vgs 5.63mOhm @ 200A, 15V
• Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V
• Vgs(th) (Max) @ Id 5.55V @ 80mA
• Supplier Device Package Module