Technical Details

• Package / Case 14-PowerLDFN
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 750V
• Current - Continuous Drain (Id) @ 25°C 9A (Tj)
• Input Capacitance (Ciss) (Max) @ Vds 53.5pF @ 400V
• Rds On (Max) @ Id, Vgs 250mOhm @ 2A, 6V
• Gate Charge (Qg) (Max) @ Vgs 1.9nC @ 6V
• Vgs(th) (Max) @ Id 1.75V @ 10mA
• Supplier Device Package 14-PQFN (6x8)