- Product Model XPJ1R004PB,LXHQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description 40V; UMOS9; MOSFET 1MOHM; L-TOGL
- Classification Single FETs, MOSFETs
Inventory:4475
Technical Details
- Package / Case 5-PowerSFN
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 160A (Ta)
- Rds On (Max) @ Id, Vgs 1mOhm @ 80A, 10V
- Power Dissipation (Max) 223W (Tc)
- Vgs(th) (Max) @ Id 3V @ 500µA
- Supplier Device Package S-TOGL™
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6890 pF @ 10 V
- Qualification AEC-Q101