- Product Model HP8KC6TB1
- Brand ROHM Semiconductor
- RoHS No
- Description 60V 23A, DUAL NCH+NCH, HSOP8, PO
- Classification FET, MOSFET Arrays
Inventory:4000
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 3W (Ta), 21W (Tc)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 23A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 460pF @ 30V
- Rds On (Max) @ Id, Vgs 27mOhm @ 8.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package 8-HSOP