- Product Model ISC110N12NM6ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH >=100V
- Classification Single FETs, MOSFETs
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Inventory:1500
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11A (Ta), 62A (Tc)
- Rds On (Max) @ Id, Vgs 11mOhm @ 26A, 10V
- Power Dissipation (Max) 3W (Ta), 94W (Tc)
- Vgs(th) (Max) @ Id 3.6V @ 35µA
- Supplier Device Package SuperSO8
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 120 V
- Gate Charge (Qg) (Max) @ Vgs 19.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 60 V