- Product Model GPI65060DFC
- Brand GaNPower
- RoHS Yes
- Description GaNFET N-CH 650V 60A DFN8x8 cu
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1600
Technical Details
- Package / Case 8-DFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 60A
- Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 12V
- Vgs(th) (Max) @ Id 1.2V @ 3.5mA
- Supplier Device Package 8-DFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) +7.5V, -12V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 400 V