Technical Details

• Package / Case 12-BESOP (0.370", 9.40mm Width), Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 58.5A (Tc)
• Rds On (Max) @ Id, Vgs 39mOhm @ 32A, 10V
• Power Dissipation (Max) 250W (Tc)
• Vgs(th) (Max) @ Id 4.6V @ 1mA
• Supplier Device Package CCPAK1212i
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 400 V