- Product Model G3K8N15HE
- Brand Goford Semiconductor
- RoHS Yes
- Description MOSFET N-CH ESD 150V 2A SOT-223
- Classification Single FETs, MOSFETs
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Inventory:6500
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Tc)
- Rds On (Max) @ Id, Vgs 370mOhm @ 2A, 10V
- Power Dissipation (Max) 2.16W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SOT-223
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 558 pF @ 75 V