Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Solar Inverter)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 272W (Tj)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 91A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 6331pF @ 800V
• Rds On (Max) @ Id, Vgs 16mOhm @ 70A, 18V
• Gate Charge (Qg) (Max) @ Vgs 306nC @ 20V
• Vgs(th) (Max) @ Id 4.4V @ 40mA
• Supplier Device Package 29-PIM (56.7x42.5)