- 产品型号 TH58BVG3S0HBAI4
- 品牌 Toshiba Memory America, Inc. (Kioxia America, Inc.)
- RoHS Yes
- 描述 8GB SLC BENAND 24NM BGA 9X11 1.
- 分类 记忆
-
PDF
- 库存 1710
技术参数
- Package / Case 63-VFBGA
- Mounting Type Surface Mount
- Memory Size 8Gbit
- Memory Type Non-Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 2.7V ~ 3.6V
- Technology FLASH - NAND (SLC)
- Memory Format FLASH
- Supplier Device Package 63-TFBGA (9x11)
- Write Cycle Time - Word, Page 25ns
- Memory Interface Parallel
- Access Time 20 ns
- Memory Organization 1G x 8
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- RoHS Status ROHS3 Compliant
