技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration 2 N-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 490mW (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 50pF @ 15V
• Rds On (Max) @ Id, Vgs 400mOhm @ 590mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 10V
• Vgs(th) (Max) @ Id 1.6V @ 100µA
• Supplier Device Package SOT-563
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant