技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1W (Ta)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 12A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 228pF @ 50V
• Rds On (Max) @ Id, Vgs 66mOhm @ 4.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package PowerDI3333-8 (Type UXC)
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant