技术参数

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 540mW (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 1.1A (Ta), 700mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 40.8pF @ 25V, 54pF @ 15V
• Rds On (Max) @ Id, Vgs 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V, 1.6nC @ 8V
• Vgs(th) (Max) @ Id 0.95V @ 250µA, 1.1V @ 250µA
• Supplier Device Package TSOT-26
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant