技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.4W (Ta), 42.8W (Tc)
• Drain to Source Voltage (Vdss) 40V
• Current - Continuous Drain (Id) @ 25°C 10.6A (Ta), 43.6A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 733pF @ 20V
• Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs 10.2nC @ 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package PowerDI5060-8 (SWP)
• Grade Automotive
• Qualification AEC-Q101
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant