- Product Model IPT067N20NM6ATMA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description TRENCH >=100V
- Classification Single FETs, MOSFETs
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Inventory:3383
Technical Details
- Package / Case 8-PowerSFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 15.3A (Ta), 137A (Tc)
- Rds On (Max) @ Id, Vgs 6.2mOhm @ 126A, 15V
- Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 251µA
- Supplier Device Package PG-HSOF-8-1
- Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 100 V