技术参数

• Package / Case TO-252-5, DPAK (4 Leads + Tab), TO-252AD
• Mounting Type Surface Mount
• Configuration N and P-Channel, Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 69W (Tc), 115W (Tc)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 50A (Tc), 60A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 2429pF @ 30V, 4471pF @ 30V
• Rds On (Max) @ Id, Vgs 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V, 62nC @ 4.5V
• Vgs(th) (Max) @ Id 2V @ 250µA, 4V @ 250µA
• Supplier Device Package TO-252-4
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS Compliant